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Surface composition and etching of III‐V semiconductors in Cl2 ion beams
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14.It has been suggested9 that adsorb both molecularly and atomically to (110) InP. The weakly bound molecular is easily desorbed and, we presume, does not contribute to etching of the substrate. Atomic Cl chemisorption is known to occur readily9,13 with the adsorbate preferentially bound to the group V atom.13
15.GaAs and InP are nearly equal in average atomic mass. Sputtering yield has shown to correlate well with average atomic mass for a variety of binary and ternary compounds. W. Katz, P. Williams, and C. A. Evan, Jr., Surf. Interface Anal. 2, 120 (1980).
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18.V. M. Donnelly, D. L. Flamm, and G. J. Collins, Abstract No. 257, Electrochem. Soc. 1981 Fall Meeting, Denver.
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