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28Si implantation into 40Ar implant‐pretreated semi‐insulating GaAs substrates—mobility and activation efficiency enhancement
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10.1063/1.93293
/content/aip/journal/apl/41/1/10.1063/1.93293
http://aip.metastore.ingenta.com/content/aip/journal/apl/41/1/10.1063/1.93293
/content/aip/journal/apl/41/1/10.1063/1.93293
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/content/aip/journal/apl/41/1/10.1063/1.93293
1982-07-01
2014-10-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 28Si implantation into 40Ar implant‐pretreated semi‐insulating GaAs substrates—mobility and activation efficiency enhancement
http://aip.metastore.ingenta.com/content/aip/journal/apl/41/1/10.1063/1.93293
10.1063/1.93293
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