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Organic‐on‐inorganic semiconductor contact barrier devices
1.See, for example, F. Gutmann and L. E. Lyons, Organic Semiconductors (Wiley, New York, 1967).
2.A. K. Ghosh and T. Feng, J. Appl. Phys. 49, 5982 (1978).
3.T. Tani, P. M. Grant, W. D. Gill, G. B. Street, and T. C. Clarke, Solid State Commun 33, 499 (1980).
4.P. N. Zanadvorov and M. L. Petrova, Sov. Phys. Semicond. 14, 1242 (1980).
5.R. S. Potember, T. O. Poehler, and D. O. Cowan, Appl. Phys. Lett. 34, 405 (1979).
6.Obtained from Aldrich Chemical Co., Inc., Milwaukee, Wise. 53233.
7.P. H. Schmidt, D. C. Joy, M. L. Kaplan, and W. L. Feldmann, Appl. Phys. Lett. 40, 93 (1982).
8.R. W. Sykes, G. G. Roberts, and D. T. Clark, IEE Proc. 127, 137 (1980).
9.A. Rose, Concepts in Photoconductivity and Allied Problems (Interscience, New York, 1963).
10.S. M. Sze, Physics of Semiconductor Devices, (Wiley, New York, 1969).
11.Effects due to substrate resistance although small, are also included in Eq. (1). Separation of the substrate resistance term may result in a slight increase in the exponent m. especially for the Ti‐contacted diode.
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