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A new method to control impact ionization rate ratio by spatial separation of avalanching carriers in multilayered heterostructures
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9.When the transverse electric field of is set by the band bending of 10 mV across the film thickness of 10 nm, holes are likely to traverse the distance of 10 nm and fall into layer B within This is much shorter than a mean free time between impact ionization (typically for
10.See, for instance, K. Seeger, Semiconductor Physics (Springer, New York, 1974), p. 327 ff.
11.Although with has indirect energy minima at X point, we have considered only the direct minimum in the order‐of‐magnitude evaluation of because the momentum conservation and the energy conservation requirements in the ionization process make the contribution of much less than that of
12.See, for instance, H. C. Casey and M. B. Panish, Heterostructure Lasers (Academic, New York, 1978), Chap. 5.
13.K. Hess, H. Mokcoç, H. Shichijo, and B. G. Streetman, Appl. Phys. Lett. 35, 469 (1979).
14.H. Sakaki, T. Tanoue, and H. Nojiri, Japanese Patent, applied Nov. 9, 1981.
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