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Ion beam epitaxy of silicon on Ge and Si at temperatures of 400 K
1.G. E. Thomas, L. J. Beckers, J. J. Vrakking, and B. R. de Koning, Cryst. Growth 56, 557 (1982).
2.T. Tokuyama, K. Yagi, K. Miyake, M. Tamura, N. Natsuaki, and S. Tachi, Nucl. Instrum. Method 182/183, 241 (1981).
3.See e.g., J. C. Bean, in Doping Processes in Silicon, edited by F. F. Y. Wang (North Holland, Amsterdam, 1981), Chap. 4;
3.J. C. Bean, 1981 IEDM Technical Digest, p. 6.
4.M. T. Robinson and I. M. Torrens, Phys. Rev. B 9, 5008 (1974).
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