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Species and deposition angle dependence of ion beam induced densification of germanium selenide films
1.An ion beam induced contraction of 39% has been observed in film deposited at 80°, K. L. Chopra, K. S. Harshavardhan, S. Rajagopalan, and L. K. Malhotra, Appl. Phys. Lett. 40, 428 (1982). Large photocontraction of 26% has also been observed, K. L. Chopra, K. S. Harshavardhan, S. Rajagopalan, and L. K. Malhotra, Solid State Commun. (in press).
2.T. Venkatesan, B. J. Wilkens, and K. Fisher, presented at the Electrochemical Society Meeting, Montreal, May 1982, Proceedings of the Symposium on Inorganic Resist Systems, edited by D. A. Doane and A. Heller (Electrochemical Society, New York, Oct. 1982).
3.M. T. Kostyshin, E. V. Michailovskaya, and D. F. Romanenko, Sov. Phys. Solid State 8, 451 (1966);
3.M. Janai, Phys. Rev. Lett. 47, 726 (1981).
4.B. Smith, Ion Implanted Range Data for Silicon and Germanium Device Technologies, 1977 (Research Studies, P. O. Box 92, Forest Grove, Oregon, 97116). We have approximated the stopping powers for with those of Ge.
5.T. Venkatesan, B. Wilkens, and S. Vincent, J. Appl. Phys. 53 (1982).
6.J. J. Garrido, D. Gerstenberg, and R. W. Berry, Thin Solid Films 41, 87 (1977).
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