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Analysis of low‐pressure chemical vapor deposited silicon nitride by Rutherford backscattering spectrometry
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10.1063/1.93714
/content/aip/journal/apl/41/9/10.1063/1.93714
http://aip.metastore.ingenta.com/content/aip/journal/apl/41/9/10.1063/1.93714
/content/aip/journal/apl/41/9/10.1063/1.93714
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/content/aip/journal/apl/41/9/10.1063/1.93714
1982-11-01
2014-12-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analysis of low‐pressure chemical vapor deposited silicon nitride by Rutherford backscattering spectrometry
http://aip.metastore.ingenta.com/content/aip/journal/apl/41/9/10.1063/1.93714
10.1063/1.93714
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