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Hot‐electron luminescence in aged electrodeposited CdSe liquid‐junction solar cell
1.Proceedings of the Symposia on Photoelectrochemical Processes and Measurement Techniques for Photoelectrochemical Solar Cells (Electrochemical Society, New York, 1982).
2.For a recent review see for example, A. Heller and B. Miller, Electrochem. Acta 25, 29 (1980).
3.Micha Tomkiewicz, Ivy Ling, and William S. Parsons, J. Electrochem. Soc. 129, 2016 (1982).
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5.The sputtering rate was calibrated against for which one minute corresponds to 50 Å. This figure should be taken only as an estimate for CdSe.
6.'The AES spectra also revealed low levels of contaminants (chiefly carbon), probably originating from the plexiglass cell. For purposes of clarity, only the results for Cd, Se, and S are shown. The Auger system sensitivities for each of the major constituents were calculated by assuming that (a) in the bulk of the dark‐aged sample (sputtering min), the average concentrations of Cd and Se are equal (this is supported by measurements on several additional unaged electrodes), and (b) for electrode B, The decrease in [Cd], [Se], and [S] close to the surface corresponds to carbon contamination.
7.R. C. C. Leite, J. F. Scott, and T. C. Damen, Phys. Rev. Lett. 22, 780 (1969).
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9.To avoid laser heating effects which could alter the properties of the thin CdSe films, the laser was focused using a cylindrical lens. For the data reported here, the laser power was 15 mW for K and 25 mW for K.
10.C. A. Arguello, D. L. Rousseau, and S. P. S. Porto, Phys. Rev. 181, 1351 (1969).
11.R. P. Silberstein and Micha Tomkiewicz (unpublished). For the shorter laser wavelength, the penetration depth of the light is less, and thus the PL originates closer to the surface.
12.We use here the A‐exciton transition for Y. S. Park and D. C. Reynolds, Phys. Rev. 132, 2450 (1963).
13.K. Mochizuki and K. Igaki, Jpn. J. Appl. Phys. 20, 113 (1981);
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14.The data presented here represent samples aged at high light intensities. At lower intensity or current density the rate and depth of the S/Se exchange could be different. In addition, aging under short circuit conditions is different from aging at the maximum power point. These variables are currently under investigation and will be reported separately.
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