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Changes in the local chemical composition during the Hg1−x Cd x Te‐Al interface formation
1.P. Morgen, J. A. Silberman, I. Lindau, W. E. Spicer, and J. A. Wilson, J. Electron. Mater. 11, 597 (1982).
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3.See for example, F. Cerrina, V. Fano, R. R. Daniels, and Te‐Xiu Zhao (unpublished).
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5.J. A. Silberman, P. Morgen, I. Lindau, W. E. Spicer, and J. A. Wilson, J. Vac. Sci. Technol. 21, 154 (1982).
6.H. M. Nitz, O. Ganschow, U. Kaiser, L. Wiedmann, and A. Benninghoven, Surf. Sci. 104, 365 (1981).
7.C. J. Powell, R. J. Steiner, P. B. Needham, and T. J. Briscoll, Phys. Rev. B 16, 1370 (1977). The escape depth should actually be larger in our case since the photoelectron kinetic energy is smaller. This gives even stronger evidence that the decrease in the Hg/Cd intensity ratio cannot be due to Cd atoms diffusing towards the surface.
8.L. J. Brillson, C. F. Brucker, A. D. Katnani, and G. Margaritondo (unpublished).
9.T. W. Kruse, in Semiconductors and Semimetals, edited by R. K. Willardson and A. C. Beer (Academic, New York, 1981), Vol. 18, p. 1.
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