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Gate‐width dependence of radiation‐induced interface traps in metal/SiO2/Si devices
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10.1063/1.93774
/content/aip/journal/apl/42/10/10.1063/1.93774
http://aip.metastore.ingenta.com/content/aip/journal/apl/42/10/10.1063/1.93774
/content/aip/journal/apl/42/10/10.1063/1.93774
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/content/aip/journal/apl/42/10/10.1063/1.93774
1983-05-15
2014-07-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gate‐width dependence of radiation‐induced interface traps in metal/SiO2/Si devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/42/10/10.1063/1.93774
10.1063/1.93774
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