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Bifurcation of deep levels in metastable (GaAs)1 −x Ge2 x alloys
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9.We expect sputter‐produced GaAs to be rich in antisite defects, and thus to have a smaller band gap than ordinary GaAs.
10.Note, in Fig. 1, for defects C, Te, P, As, and Po, the lower curve corresponds to an anion‐site defect.
11.For most defects will preferentially occupy either the anion or the cation site, with this preference becoming stronger with decreasing x.
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