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Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates
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10.1063/1.93952
/content/aip/journal/apl/42/5/10.1063/1.93952
http://aip.metastore.ingenta.com/content/aip/journal/apl/42/5/10.1063/1.93952
/content/aip/journal/apl/42/5/10.1063/1.93952
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/content/aip/journal/apl/42/5/10.1063/1.93952
1983-03-01
2014-12-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/42/5/10.1063/1.93952
10.1063/1.93952
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