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Interactions between H2 and N2 plasmas and a GaAs(100) surface: Chemical and electronic properties
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4.Supplied by Delta‐Phi. Electronik, Jülich, Germany.
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6.Since the sample is thermally isolated from the sample holder, to allow direct Joule heating, we have no means of measuring precisely its temperature during plasma. It can be estimated to be at least 150 °C after 15–20 min of exposure (higher than the melting point of indium).
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