1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Temperature and field dependence of the generation of interface states in the Si‐SiO2 system after high‐field stress
Rent:
Rent this article for
USD
10.1063/1.94010
/content/aip/journal/apl/42/7/10.1063/1.94010
http://aip.metastore.ingenta.com/content/aip/journal/apl/42/7/10.1063/1.94010
/content/aip/journal/apl/42/7/10.1063/1.94010
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/42/7/10.1063/1.94010
1983-04-01
2014-09-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature and field dependence of the generation of interface states in the Si‐SiO2 system after high‐field stress
http://aip.metastore.ingenta.com/content/aip/journal/apl/42/7/10.1063/1.94010
10.1063/1.94010
SEARCH_EXPAND_ITEM