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High‐efficiency GaP pure green light‐emitting diodes of 555 nm fabricated by new liquid phase epitaxy method
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10.1063/1.94362
/content/aip/journal/apl/43/5/10.1063/1.94362
http://aip.metastore.ingenta.com/content/aip/journal/apl/43/5/10.1063/1.94362
/content/aip/journal/apl/43/5/10.1063/1.94362
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/content/aip/journal/apl/43/5/10.1063/1.94362
1983-09-01
2015-05-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High‐efficiency GaP pure green light‐emitting diodes of 555 nm fabricated by new liquid phase epitaxy method
http://aip.metastore.ingenta.com/content/aip/journal/apl/43/5/10.1063/1.94362
10.1063/1.94362
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