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High‐sensitivity Ga0.47In0.53As photoconductive detectors prepared by vapor phase epitaxy
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10.1063/1.94670
/content/aip/journal/apl/44/12/10.1063/1.94670
http://aip.metastore.ingenta.com/content/aip/journal/apl/44/12/10.1063/1.94670
/content/aip/journal/apl/44/12/10.1063/1.94670
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/content/aip/journal/apl/44/12/10.1063/1.94670
1984-06-15
2014-10-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High‐sensitivity Ga0.47In0.53As photoconductive detectors prepared by vapor phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/44/12/10.1063/1.94670
10.1063/1.94670
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