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Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μm
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10.1063/1.94727
/content/aip/journal/apl/44/3/10.1063/1.94727
http://aip.metastore.ingenta.com/content/aip/journal/apl/44/3/10.1063/1.94727
/content/aip/journal/apl/44/3/10.1063/1.94727
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/content/aip/journal/apl/44/3/10.1063/1.94727
1984-02-01
2014-10-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μm
http://aip.metastore.ingenta.com/content/aip/journal/apl/44/3/10.1063/1.94727
10.1063/1.94727
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