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Hot electrons in modulation‐doped GaAs‐AlGaAs heterostructures
1.R. Dingle, H. L. Störmer, A. C. Gossard, and W. Wiegmann, Appl. Phys. Lett. 33, 665 (1978);
1.also H. L. Störmer, J. Phys. Soc. Jpn. A 49, 1013 (1980).
2.For a review, see T. Mimura, Surf. Sci. 113, 454 (1982).
3.Jagdeep Shah, A. Pinczuk, H. L. Störmer, A. C. Gossard, and W. Wiegmann, Appl. Phys. Lett. 42, 55 (1983).
4.H. L. Störmer, A. Pinczuk, A. C. Gossard, and W. Wiegmann, Appl. Phys. Lett. 38, 691 (1981).
5.A. Pinczuk, Jagdeep Shah, H. L. Störmer, A. C. Gossard, R. C. Miller, and W. Wiegmann, Proceedings of the 5th International Conference on Electronic Properties of Two‐Dimensional Systems (to be published).
6.For the luminescence peak shifts to lower energy (see Fig. 1). This implies the presence of some lattice heating However, the carrier temperature of 165 K would not be significantly different in the absence of such a lattice heating [see, for example, the equations in Jagdeep Shah, Solid State Electron. 21, 43 (1978)].
7.These estimates were made using the expressions for polar optical phonon limited mobility for a three‐dimensional Maxwellian election gas;
7.see e.g., E. M. Conwell, High Field Transport in Semiconductors, Suppl. 9 to Solid State Physics, edited by F. Seitz, D. Turnbull, and H. Ehrenreich (Academic, New York, 1967).
8.K. Hess, in Physics of Nonlinear Transport in Semiconductors, edited by D. Ferry, J. Barker, and C. Jacobani (Plenum, New York, 1980), p. 1.
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