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Monolithic integration of an AlGaAs/GaAs multiquantum well laser and GaAs metal‐semiconductor field‐effect transistors on a semi‐insulating GaAs substrate by molecular beam epitaxy
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10.1063/1.94741
/content/aip/journal/apl/44/3/10.1063/1.94741
http://aip.metastore.ingenta.com/content/aip/journal/apl/44/3/10.1063/1.94741
/content/aip/journal/apl/44/3/10.1063/1.94741
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/content/aip/journal/apl/44/3/10.1063/1.94741
1984-02-01
2014-10-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Monolithic integration of an AlGaAs/GaAs multiquantum well laser and GaAs metal‐semiconductor field‐effect transistors on a semi‐insulating GaAs substrate by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/44/3/10.1063/1.94741
10.1063/1.94741
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