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Determination of SiO2 trapped charge distribution by capacitance‐voltage analysis of undoped polycrystalline silicon‐oxide‐silicon capacitors
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10.1063/1.94795
/content/aip/journal/apl/44/4/10.1063/1.94795
http://aip.metastore.ingenta.com/content/aip/journal/apl/44/4/10.1063/1.94795
/content/aip/journal/apl/44/4/10.1063/1.94795
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/content/aip/journal/apl/44/4/10.1063/1.94795
1984-02-15
2014-10-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determination of SiO2 trapped charge distribution by capacitance‐voltage analysis of undoped polycrystalline silicon‐oxide‐silicon capacitors
http://aip.metastore.ingenta.com/content/aip/journal/apl/44/4/10.1063/1.94795
10.1063/1.94795
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