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Effect of stress relaxation on the generation of radiation‐induced interface traps in post‐metal‐annealed Al‐SiO2‐Si devices
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10.1063/1.95200
/content/aip/journal/apl/45/3/10.1063/1.95200
http://aip.metastore.ingenta.com/content/aip/journal/apl/45/3/10.1063/1.95200
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/content/aip/journal/apl/45/3/10.1063/1.95200
1984-08-01
2014-12-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of stress relaxation on the generation of radiation‐induced interface traps in post‐metal‐annealed Al‐SiO2‐Si devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/45/3/10.1063/1.95200
10.1063/1.95200
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