Full text loading...
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Influence of high‐temperature annealing on performance of edge‐defined film‐fed growth silicon ribbon solar cells
1.C. T. Ho and F. V. Wald, Phys. Status Solidi A 67, 103 (1981).
2.J. P. Kalejs, M. C. Cretella, F. V. Wald, and B. Chalmers, Proceedings of the Symposium on Electronic and Optical Properties of Polycrystalline or Impure Semiconductors and Novel Silicon Growth Methods, edited by K. V. Ravi and B. O’Mara (Electrochemical Society, Pennington, NJ, 1980), p. 242.
3.K. V. Ravi, R. C. Gonsiorawski, A. R. Chaudhuri, C. V. Hari Rao, C. T. Ho, J. I. Hanoka, and B. R. Bathey, 15th IEEE Photovoltaic Specialists Conference Record (IEEE, New York, 1981), p. 928.
4.Annual Book of ASTM Standards (ASTM, Philadelphia, 1981), Part 43, F‐121.
5.Standard cell processing details are as described in the work of C. T. Ho, G. Moeller, F. V. Wald, and M. Spitzer, Solar Cells 11, 29 (1984).
6.The dark surface photovoltage (SPV) diffusion length measurement on asgrown ribbon is made at low light intensities and is described in R. O. Bell and G. M. Freedman, 13th IEEE Photovoltaic Specialists Conference Record (IEEE, New York, 1978), p. 89.
7.R. A. Craven, in Semiconductor Silicon 1981, edited by H. R. Huff, R. J. Kriegler, and Y. Takeishi (Electrochemical Society, Pennington, NJ, 1981), p. 254.
8.H. Föll, U. Gösele, and B. O. Kolbesen, J. Cryst. Growth 40, 90 (1977). We are indebted to Dr. Gösele for pointing out that the ratio of growth speed to interface temperature gradient, not the growth rate as suggested in this reference, appears to be the parameter governing the regime of B‐swirl nucleation. This ratio is comparable for the ribbon and CZ growth systems because both quantities are a factor of 10 larger in the former;
8.see also V. V. Voronkov, J. Cryst. Growth 59, 625 (1982).
9.W. Zulehner, in Proceedings of the Satellite Symposium to ESSDERC’82, Munich, edited by E. Sirtl and J. Goorissen (Electrochemical Society, Pennington, NJ, 1983), p. 89.
10.D. G. Ast, B. Cunningham, and H. P. Strunk, in Grain Boundaries in Semiconductors, edited by H. J. Leamy, G. E. Pike, and C. H. Seager (North‐Holland, New York, 1982), p. 167.
11.L. A. Ladd (unpublished).
12.R. Gleichmann (unpublished).
13.K. Nauka, H. C. Gatos, and J. Lagowski, Appl. Phys. Lett. 43, 241 (1983).
Article metrics loading...