1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
High performance inverted and large current double interface modulation‐doped field‐effect transistors with the bulk (Al,Ga)As replaced by superlattice at the inverted interface
Rent:
Rent this article for
USD
10.1063/1.95408
/content/aip/journal/apl/45/8/10.1063/1.95408
http://aip.metastore.ingenta.com/content/aip/journal/apl/45/8/10.1063/1.95408
Loading

Article metrics loading...

/content/aip/journal/apl/45/8/10.1063/1.95408
1984-10-15
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High performance inverted and large current double interface modulation‐doped field‐effect transistors with the bulk (Al,Ga)As replaced by superlattice at the inverted interface
http://aip.metastore.ingenta.com/content/aip/journal/apl/45/8/10.1063/1.95408
10.1063/1.95408
SEARCH_EXPAND_ITEM