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626.2‐nm pulsed operation (300 K) of an AlGaInP double heterostructure laser grown by metalorganic chemical vapor deposition
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10.1063/1.95804
/content/aip/journal/apl/46/1/10.1063/1.95804
http://aip.metastore.ingenta.com/content/aip/journal/apl/46/1/10.1063/1.95804
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/content/aip/journal/apl/46/1/10.1063/1.95804
1985-01-01
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 626.2‐nm pulsed operation (300 K) of an AlGaInP double heterostructure laser grown by metalorganic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/46/1/10.1063/1.95804
10.1063/1.95804
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