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Diode structures formed by rapid thermal annealing of boron implanted silicon
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10.1063/1.95841
/content/aip/journal/apl/46/1/10.1063/1.95841
http://aip.metastore.ingenta.com/content/aip/journal/apl/46/1/10.1063/1.95841
/content/aip/journal/apl/46/1/10.1063/1.95841
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/content/aip/journal/apl/46/1/10.1063/1.95841
1985-01-01
2014-11-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Diode structures formed by rapid thermal annealing of boron implanted silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/46/1/10.1063/1.95841
10.1063/1.95841
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