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Determination of interfacial quality of GaAs‐GaAlAs multi‐quantum well structures using photoluminescence spectroscopy
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10.1063/1.95848
/content/aip/journal/apl/46/1/10.1063/1.95848
http://aip.metastore.ingenta.com/content/aip/journal/apl/46/1/10.1063/1.95848
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/content/aip/journal/apl/46/1/10.1063/1.95848
1985-01-01
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determination of interfacial quality of GaAs‐GaAlAs multi‐quantum well structures using photoluminescence spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/46/1/10.1063/1.95848
10.1063/1.95848
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