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Electrical study of Schottky barrier heights on atomically clean and air‐exposed n‐InP(110) surfaces
1.L. J. Brillson, Surf. Sci. Rep. 2, 123 (1982);
1.and references therein.
2.R. H. Williams, V. Montgomery, R. R. Varma, and A. McKinley, J. Phys. D. 10, L253 (1977);
2.R. H. Williams, A. McKinley, G. J. Hughes, and T. P. Humphreys, J. Vac. Sci. Technol. B 2, 561 (1984);
2.and references therein.
3.L. J. Brillson and C. F. Brucker, J. Vac. Sci. Technol. 21, 564 (1982);
3.and references therein.
4.N. Newman, W. G. Petro, T. Kendelewicz, S. H. Pan, S. J. Eglash, and W. E. Spicer, Solid State Electron. (in press).
5.M. R. Waldrop, S. P. Kowalczyk, and R. W. Grant, J. Vac. Sci. Technol. 2, 445 (1984).
6.G. S. Korotchenkov and I. P. Molodyan, Sov. Phys. Semicond. 12, 141 (1978);
6.B. L. Smith, J. Phys. D 6, 1358 (1973).
7.E. Hokelek and G. Y. Robinson, Appl. Phys. Lett. 40, 427 (1982);
7.N. Szydlo and J. Oliver, J. Appl. Phys. 3, 1445 (1979).
8.W. E. Spicer, N. Newman, T. Kendelewicz, W. G. Petro, M. D. Williams, C. E. McCants, and I. Lindau, J. Vac. Sci. Technol. (in press).
9.B. L. Smith, Ph.D. thesis, Manchester University, 1969.
10.The data were analyzed using an optimized least squares curve fitting routine supplied by Mark van Schilfgaarde, Applied Physics Department, Stanford University.
11.E. H. Rhoderick, Metal‐Semiconductor Contacts (Clarendon, Oxford, England, 1980).
12.In earlier reports, Williams and co‐workers reported nonrectifying behavior for the low barrier height devices (Ref. 2). By using much smaller devices than used in the study by Williams (1977), we were able to show that the I‐V characteristics of the diodes are indeed rectifying and accurate barrier height measurements were made.
13.Because the calculation of the barrier height is based on thermiohic emission theory (i.e., ), discretion must be used in choosing barrier height determinations which measure near‐unity ideality factors.
14.J. L. Freeouf and J. M. Woodall, Appl. Phys. Lett. 39, 727 (1981).
15.T. Kendelewicz, W. G. Petro, I. Lindau, and W. E. Spicer, J. Vac. Sci. Technol. B 2, 453 (1984);
15.and references therein.
16.R. S. List, T. Kendelewicz, M. D. Williams, I. Lindau, and W. E. Spicer, J. Vac. Sci. Technol. (in press).
17.Although In alloying with the metal overlayer has been reported for the Mn and Ni overlayers in Refs. 2, 15, and 16, In alloying is not expected to occur with Cr (Ref. 16). This difference is not believed to alter the conclusions in the text in that the Cr: InP system would be expected to more likely trap In at the interface. Predictions within the context of the effective work function model due to this effect would therefore be expected to be in the wrong direction to reconcile the differences found.
18.W. E. Spicer, I. Lindau, P. Skeath, and C. Y. Su, J. Vac. Sci. Technol. 17, 1019 (1980);
18.W. E. Spicer, S. Eglash, I. Lindau, C. Y. Su, and P. Skeath, Thin Solid Films 89, 447 (1982).
19.G. P. Srivastava, Proceedings of the Conference on Semi‐insulating III‐V Materials (Shiva, Nottingham England, 1980), p. 296.
20.J. D. Dow and R. E. Allen, J. Vac. Sci. Technol. 20, 659 (1982).
21.G. S. Korotchenkov and I. P. Molodyan (Ref. 6) have also reported a distinctly higher barrier height for Ag (0.59 eV) deposited on chemically prepared n‐InP (110) surfaces.
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