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Strongly polarized bound exciton luminescence from GaAs grown by molecular beam epitaxy
1.H. Künzel and K. Ploog, Appl. Phys. Lett. 37, 416 (1980);
1.H. Künzel and K. Ploog, GaAs and Related Compounds 1980 (Institute of Physics Conference Series, No. 56, Bristol, 1981), p. 519.
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15.Line 47 is found in LPE material1 and in MOCVD and VPE material (T. D. Harris, M. S. Skolnick, and R. Bhat, unpublished).
16.According to Ref. 5 this defect is an acceptor with a binding energy of 23 meV. This is based on the assignment of a selectively excited satellite line, 15.8 meV below line 47, to a two‐hole transition. We have repeated the selected excitation experiment and find satellites at 21.3 and 22.4 meV, but not at 15.8 meV. We believe that there is no compelling reason to assign any satellite to a two‐hole transition.
17.P. J. Dean, in Progress in Solid State Chemistry, edited by T. O. McCaldin and G. Somorjai (Pergamon, Oxford, 1973), Vol. 8, p. 1.
18.The selective excitation results are complicated and will be discussed elsewhere.
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20.In principle, dislocations could have the same symmetry‐breaking effect. However, no correlation with dislocation density is found, and it is unlikely that such sharp and reproducible PL could come from the strained region around a dislocation.
21.M. Bafleur, A. Munoz‐Yague, and A. Rocher, J. Cryst. Growth 59, 531 (1982).
22.A. Y. Cho and C. R. Whitehouse (private communication).
23.J. H. Neave, B. A. Joyce, P. J. Dobson, and N. Norton, Appl. Phys. A 31, 1 (1983).
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