No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Growth of ultrapure and Si‐doped InP by low pressure metalorganic chemical vapor deposition
1.L. L. Taylor and D. A. Anderson, J. Cryst. Growth 64, 55 (1983).
2.P. L. Giles, P. Davies, and N. B. Hasdell, J. Cryst. Growth 64, 60 (1983).
3.J. P. Duchemin, M. Bonnet, G. Beuchet, and F. Koelsch, Inst. Phys. Conf. Ser. No. 45, Chap. 1 (1979).
4.M. Razeghi and J. P. Duchemin, J. Cryst. Growth 64, 76 (1983).
5.W. Walukiewicz, J. Lagowski, L. Jastrzebski, P. Rava, M. Lichtensteiger, C. H. Gatos, and H. C. Gatos, J. Appl. Phys. 51, 2659 (1980).
6.M. S. Skolnick and P. J. Dean, J. Phys. C 15, 5863 (1982).
Article metrics loading...
Full text loading...
Most read this month
Most cited this month