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Redistribution of Cr in GaAs:Cr and of V in GaAs:V after implantation of Si, Be, or B and annealing in a controlled atmosphere
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10.1063/1.95567
/content/aip/journal/apl/46/5/10.1063/1.95567
http://aip.metastore.ingenta.com/content/aip/journal/apl/46/5/10.1063/1.95567
/content/aip/journal/apl/46/5/10.1063/1.95567
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/content/aip/journal/apl/46/5/10.1063/1.95567
1985-03-01
2014-12-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Redistribution of Cr in GaAs:Cr and of V in GaAs:V after implantation of Si, Be, or B and annealing in a controlled atmosphere
http://aip.metastore.ingenta.com/content/aip/journal/apl/46/5/10.1063/1.95567
10.1063/1.95567
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