Stringent requirements on the electrical and metallurgical properties of metallization systems for use in advanced, very large scale integrated circuits have created the need to study new metal‐silicon systems. We have conducted a study of the Mo/Si direct contact system. The choice of molybdenum stems from its desirable electrical and metallurgical properties. To date, however, its contact properties to silicon were not examined in detail. Results of the present study show that Mo can result in low resistivities (<5 Ω μm2) for both contacts to heavily doped p+‐Si and n+‐Si, provided appropriate care is taken in opening the contact windows. Further, we found the Mo/Si contact system to be stable under extended heat treatments at temperatures of up to 650 °C.
Skip Nav Destination
Article navigation
1 April 1985
Research Article|
April 01 1985
Direct molybdenum contacts to silicon
S. S. Cohen;
S. S. Cohen
Signal Electronics Laboratory, General Electric Company, Corporate Research and Development, Schenectady, New York 12301
Search for other works by this author on:
M. J. Kim;
M. J. Kim
Signal Electronics Laboratory, General Electric Company, Corporate Research and Development, Schenectady, New York 12301
Search for other works by this author on:
D. M. Brown;
D. M. Brown
Signal Electronics Laboratory, General Electric Company, Corporate Research and Development, Schenectady, New York 12301
Search for other works by this author on:
G. Gildenblat
G. Gildenblat
Digital Equipment Corporation, Hudson, Massachusetts 01749
Search for other works by this author on:
Appl. Phys. Lett. 46, 657–659 (1985)
Article history
Received:
December 11 1984
Accepted:
January 14 1985
Citation
S. S. Cohen, M. J. Kim, D. M. Brown, G. Gildenblat; Direct molybdenum contacts to silicon. Appl. Phys. Lett. 1 April 1985; 46 (7): 657–659. https://doi.org/10.1063/1.95519
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Sign in via your Institution
Sign in via your InstitutionPay-Per-View Access
$40.00
Citing articles via
Feedback cooling of an insulating high-Q diamagnetically levitated plate
S. Tian, K. Jadeja, et al.
MXene/AlGaN van der Waals heterojunction self-powered photodetectors for deep ultraviolet communication
Linhao Li, Yixun He, et al.
Evolution of electro-induced blood plasma droplets on a superhydrophobic microstructured surface
Kaikai Li, Yingxi Xie, et al.