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Mechanism for dislocation density reduction in GaAs crystals by indium addition
1.R. N. Thomas (private communication).
2.J. C. Mikkelsen, Jr. and J. B. Boyce, Phys. Rev. B 28, 7130 (1983).
3.K. C. Hass, R. J. Lempert, and H. Ehrenreich, Phys. Rev. Lett. 52, 77 (1984).
4.A. Zunger and J. E. Jaffe, Phys. Rev. Lett. 51, 662 (1983).
5.R. W. G. Wyckoff, Crystal Structures (Interscience, NY, 1964), Vol. 2, p. 338.
6.J. P. Hirth and J. Lothe, Theory of Dislocations, second edition (Wiley, NY, 1982), Chap. 2.
7.J. P. Hirth and J. Lothe, Theory of Dislocations, second edition (Wiley, NY, 1982), Chap. 14.
8.Yu.‐A. Burenkov, Yu.‐M. Burdokov, S.‐Yu. Davidov, and S. P. Nikanorov, Sov. Phys. Solid State 15, 1175 (1973);
8.see also A. S. Jordan, J. Cryst. Growth 49, 631 (1980).
9.J. P. Hirth and J. Lothe, Theory of Dislocations, second edition (Wiley, NY, 1982), Chap. 18.
10.V. Swaminathan and S. M. Copley, J. Am. Cer. Soc. 58, 482 (1975).
11.R. L. Fleischer, in The Strengthening of Metals, edited by D. Peckner (Reinhold, NY, 1964), p. 114. The solution hardening values tabulated there refer to the dilute limit of 100 ppm. For typical values for strong hardeners would correspond to compared to the estimated value 0.2 μ for InGaAs.
12.A. Sher (private communication).
13.See, for example, G. C. Osbourn, Phys. Rev. B 27, 5126 (1983).
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