1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Selective area growth of GaAs and In0.53Ga0.47As epilayer structures by chemical beam epitaxy using silicon shadow masks: A demonstration of the beam nature
Rent:
Rent this article for
USD
10.1063/1.95911
/content/aip/journal/apl/46/8/10.1063/1.95911
http://aip.metastore.ingenta.com/content/aip/journal/apl/46/8/10.1063/1.95911
/content/aip/journal/apl/46/8/10.1063/1.95911
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/46/8/10.1063/1.95911
1985-04-15
2014-12-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Selective area growth of GaAs and In0.53Ga0.47As epilayer structures by chemical beam epitaxy using silicon shadow masks: A demonstration of the beam nature
http://aip.metastore.ingenta.com/content/aip/journal/apl/46/8/10.1063/1.95911
10.1063/1.95911
SEARCH_EXPAND_ITEM