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Optical transitions and acceptor binding energies in GaAs/Al x Ga1−x As single quantum well heterostructures grown by molecular beam epitaxy
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10.1063/1.96250
/content/aip/journal/apl/47/2/10.1063/1.96250
http://aip.metastore.ingenta.com/content/aip/journal/apl/47/2/10.1063/1.96250
/content/aip/journal/apl/47/2/10.1063/1.96250
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/content/aip/journal/apl/47/2/10.1063/1.96250
1985-07-15
2014-07-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical transitions and acceptor binding energies in GaAs/AlxGa1−xAs single quantum well heterostructures grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/47/2/10.1063/1.96250
10.1063/1.96250
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