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Compensation of p‐type cast polycrystalline silicon by hydrogen ion implantation at 300 °C
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10.1063/1.96171
/content/aip/journal/apl/47/4/10.1063/1.96171
http://aip.metastore.ingenta.com/content/aip/journal/apl/47/4/10.1063/1.96171
/content/aip/journal/apl/47/4/10.1063/1.96171
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/content/aip/journal/apl/47/4/10.1063/1.96171
1985-08-15
2014-09-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Compensation of p‐type cast polycrystalline silicon by hydrogen ion implantation at 300 °C
http://aip.metastore.ingenta.com/content/aip/journal/apl/47/4/10.1063/1.96171
10.1063/1.96171
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