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Elimination of dark line defects in lattice‐mismatched epilayers through use of strained‐layer superlattices
1.J. Hornstra, J. Phys. Chem. Solids 5, 29 (1958).
2.See, for example, G. B. Stringfellow and P. E. Greene, J. Appl. Phys. 40, 502 (1969).
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5.See, for example, S. Kishino, M. Ogirima, and K. Kurata, J. Electrochem. Soc. 119, 617 (1972).
6.See the review of strainedlayer superlattices, and references therein, by G. C. Osbourn, P. L. Gourley, I. J. Fritz, R. M. Biefeld, L. R. Dawson, and T. E. Zipperian, in Semiconductors and Semimetals, edited by R. K. Willardson and A. C. Beer (Academic, New York, in press), Vol. 22.
7.J. W. Matthews and A. E. Blakeslee, J. Vac. Sci. Technol. 14, 989 (1977), and references therein.
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9.P. L. Gourley, R. M. Biefeld, G. C. Osbourn, and I. J. Fritz, Proceedings of the 10th International Symposium on GaAs and Related Compounds, Albuquerque, NM, 1982 (British Institute of Physics, Bristol, 1983), p. 249.
10.P. L. Gourley, R. M. Biefeld, T. E. Zipperian, and J. J. Wiczer, Appl. Phys. Lett. 44, 983 (1984).
11.We observed that the SLS damage thresholds occurring at higher irradiance were comparable to those for the bulk materials comprising the SLS layers.
12.The irregular DLD’s appear to be related to irregular layer growth observed in scanning electron micrographs of SLS’s with (see Refs. 13 and 14 below). We have examined SLS’s by the same method and find irregular growth (cellular structure) near surface slip lines. We have observed that these slip lines have a one‐to‐one correpondence with the DLD’s.
13.A. E. Blakeslee, A. Kibbler, and M. W. Wanlass, Superlattices and Microstructures 1, 339 (1985).
14.A. E. Blakeslee, A. Kibbler, M. W. Wanlass, and R. M. Biefeld (unpublished).
15.The electronic mobility for these same samples has been measured. There is a direct correspondence between the value of the mobility and the sample quality indicated by DLD density. See I. J. Fritz, S. T. Picraux, L. R. Dawson, T. J. Drummond, W. D. Laidig, and N. G. Anderson, Appl. Phys. Lett. 46, 967 (1985).
16.N. G. Anderson, W. D. Laidig, and Y. F. Lin, J. Electron. Mater. 14, 187 (1985).
17.R. M. Biefeld, G. C. Osbourn, P. L. Gourley, and I. J. Fritz, J. Electron. Mater. 12, 903 (1983).
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