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Light‐induced defects in hydrogenated amorphous silicon observed by picosecond photoinduced absorption
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9.A rigorous analysis of the photoinduced transitions in α‐Si:H, including upward and downward transitions, bleaching, and correlation energy effects at dangling bonds, reduces to Eq. (1). Cross sections and each actually represent more than one type of transition. J. Strait and J. Tauc (unpublished).
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14.If we suppose that 1 h of illumination raises to about and that Fig. 3 indicates that is on the order of 10 for P‐doped α‐Si:H. Thus the capture cross section for deep traps is substantially larger than that for shallow traps, as is expected if the deep traps are charged.
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