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Observation of new common emissions in GaAs produced by ion implantation of four acceptor impurities
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10.1063/1.96762
/content/aip/journal/apl/48/1/10.1063/1.96762
http://aip.metastore.ingenta.com/content/aip/journal/apl/48/1/10.1063/1.96762
/content/aip/journal/apl/48/1/10.1063/1.96762
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/content/aip/journal/apl/48/1/10.1063/1.96762
1986-01-06
2014-07-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation of new common emissions in GaAs produced by ion implantation of four acceptor impurities
http://aip.metastore.ingenta.com/content/aip/journal/apl/48/1/10.1063/1.96762
10.1063/1.96762
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