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Point defect kinetics and dopant diffusion during silicon oxidation
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10.1063/1.96725
/content/aip/journal/apl/48/10/10.1063/1.96725
http://aip.metastore.ingenta.com/content/aip/journal/apl/48/10/10.1063/1.96725
/content/aip/journal/apl/48/10/10.1063/1.96725
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/content/aip/journal/apl/48/10/10.1063/1.96725
1986-03-10
2014-07-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Point defect kinetics and dopant diffusion during silicon oxidation
http://aip.metastore.ingenta.com/content/aip/journal/apl/48/10/10.1063/1.96725
10.1063/1.96725
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