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Using focused ion beam damage patterns to photoelectrochemically etch features in III‐V materials
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10.1063/1.96735
/content/aip/journal/apl/48/10/10.1063/1.96735
http://aip.metastore.ingenta.com/content/aip/journal/apl/48/10/10.1063/1.96735
/content/aip/journal/apl/48/10/10.1063/1.96735
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/content/aip/journal/apl/48/10/10.1063/1.96735
1986-03-10
2014-11-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Using focused ion beam damage patterns to photoelectrochemically etch features in III‐V materials
http://aip.metastore.ingenta.com/content/aip/journal/apl/48/10/10.1063/1.96735
10.1063/1.96735
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