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Threshold adjustments for complementary metal‐oxide‐semiconductor optimization using B and As focused ion beams
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10.1063/1.96738
/content/aip/journal/apl/48/10/10.1063/1.96738
http://aip.metastore.ingenta.com/content/aip/journal/apl/48/10/10.1063/1.96738
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/content/aip/journal/apl/48/10/10.1063/1.96738
1986-03-10
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Threshold adjustments for complementary metal‐oxide‐semiconductor optimization using B and As focused ion beams
http://aip.metastore.ingenta.com/content/aip/journal/apl/48/10/10.1063/1.96738
10.1063/1.96738
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