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Far‐infrared emission from two‐dimensional plasmons in AlGaAs/GaAs heterointerfaces
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7.Basic formulas are given in Ref. 3. In the present calculation, the dispersion relation of Eq. (3) was used. Though the expression of the emission power differs in its appearance from Eq. (4) of Ref. 3, the value of the calculated emission power was larger by only 5% for the emitter ♯124‐03. The electron temperature was estimated8 by using the thermal FIR intensity from the bare sample.
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9.R. A. Höpfel, E. Gornik, and G. Weimann, Proceedings of the 17th International Conference on The Physics of Semiconductors (Springer, New York, 1985), p. 579.
10.Though they gave no explicit value of AlGaAs thickness, it can be obtained to be 0.98 μm from their estimated resonant frequency of
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