Roles of shallow and deep electron traps causing backgating in GaAs metal‐semiconductor field‐effect transistors
1.Backgating is said to occur in an n‐channel MESFET when a sudden reduction of its drain current is caused by a negative voltage applied to a nearby region, with respect to the source contact, that exceeds a threshold value.
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9.In this paper “deep” electron traps refer to deep levels located near the center of the band and “shallow” electron traps refer to those levels which are relatively shallower.
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