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Interdiffusion at the Ge(100)/Sn and Ge(111)/Sn interfaces
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11.We note here that a similar process has been suggested for the Nb/Al system [J. Kwo, G. K. Wertheim, M. Gurvitch, and D. N. E. Buchanan, Appl. Phys. Lett. 40, 675 (1982)]. There it was proposed that Al diffuses rapidly into the noncrystalline Nb substrate, but leaves a thin layer on each Nb grain.
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