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Reduced temperature sensitivity Al x Ga1−x As‐GaAs quantum well lasers with (Si2) x (GaAs)1−x ‘‘barriers’’
1.N. Holonyak, Jr., R. M. Kolbas, R. D. Dupuis, and P. D. Dapkus, IEEE J. Quantum Electron. QE‐16, 170 (1980).
2.N. Holonyak, Jr. and K. Hess, in Synthetic Modulated Structures, edited by L. L. Chang and B. C. Giessen (Academic, Orlando, 1985), pp. 257–310.
3.R. D. Dupuis, P. D. Dapkus, R. Chin, N. Holonyak, Jr., and S. W. Kirchoefer, Appl. Phys. Lett. 34, 265 (1979).
4.R. Chin, N. Holonyak, Jr., B. A. Vojak, K. Hess, R. D. Dupuis, and P. D. Dapkus, Appl. Phys. Lett. 36, 19 (1980).
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7.R. D. Dupuis, L. A. Moudy, and P. D. Dapkus, Proceedings of the 7th International Symposium on GaAs and Related Compounds, edited by C. M. Wolfe (Institute of Physics, London, 1979), pp. 1–9.
7.For an extensive review and references on MOCVD, see M. J. Ludowise, J. Appl. Phys. 58, R31 (1985).
8.K. C. Hsieh, R. W. Kaliski, N. Holonyak, Jr., and R. D. Burnham, Appl. Phys. Lett. 48, 943 (1986).
9.H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers, Part B: Materials and Operating Characteristics (Academic, Orlando, 1978), p. 208.
10.The fact that the QW GaAs growth is interrupted and the Si is deposited (from a doping silane source) on the crystal surface apparently results in deposition of patches (“islands”) of Si, mainly Si‐Si pairs, on the GaAs. When these are overgrown with more GaAs, which has much open area of GaAs on which to seed properly, clustered is formed.6
11.K. Hess, B. A. Vojak, N. Holonyak, Jr., R. Chin, and P. D. Dapkus, Solid State Electron. 23, 585 (1980).
12.G. S. Jackson, D. G. Deppe, K. C. Hsieh, N. Holonyak, Jr., D. C. Hall, R. D. Burnham, R. L. Thornton, and T. L. Paoli (unpublished data).
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