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Shifts in the flatband voltage of metal‐oxide‐silicon structure due to iodine in SiO2
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10.1063/1.96935
/content/aip/journal/apl/48/2/10.1063/1.96935
http://aip.metastore.ingenta.com/content/aip/journal/apl/48/2/10.1063/1.96935
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/content/aip/journal/apl/48/2/10.1063/1.96935
1986-01-13
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Shifts in the flatband voltage of metal‐oxide‐silicon structure due to iodine in SiO2
http://aip.metastore.ingenta.com/content/aip/journal/apl/48/2/10.1063/1.96935
10.1063/1.96935
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