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Deep level transient spectroscopy of hole defects in bulk‐grown p‐GaAs using Schottky barrier diodes
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10.1063/1.96973
/content/aip/journal/apl/48/2/10.1063/1.96973
http://aip.metastore.ingenta.com/content/aip/journal/apl/48/2/10.1063/1.96973
/content/aip/journal/apl/48/2/10.1063/1.96973
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/content/aip/journal/apl/48/2/10.1063/1.96973
1986-01-13
2014-08-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Deep level transient spectroscopy of hole defects in bulk‐grown p‐GaAs using Schottky barrier diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/48/2/10.1063/1.96973
10.1063/1.96973
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