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Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors
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10.1063/1.96974
/content/aip/journal/apl/48/2/10.1063/1.96974
http://aip.metastore.ingenta.com/content/aip/journal/apl/48/2/10.1063/1.96974
/content/aip/journal/apl/48/2/10.1063/1.96974
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/content/aip/journal/apl/48/2/10.1063/1.96974
1986-01-13
2014-12-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/48/2/10.1063/1.96974
10.1063/1.96974
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