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Selective‐area epitaxy of GaAs through silicon dioxide windows by molecular beam epitaxy
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10.1063/1.96977
/content/aip/journal/apl/48/2/10.1063/1.96977
http://aip.metastore.ingenta.com/content/aip/journal/apl/48/2/10.1063/1.96977
/content/aip/journal/apl/48/2/10.1063/1.96977
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/content/aip/journal/apl/48/2/10.1063/1.96977
1986-01-13
2014-09-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Selective‐area epitaxy of GaAs through silicon dioxide windows by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/48/2/10.1063/1.96977
10.1063/1.96977
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