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Origin of ‘‘residual’’ persistent photoconductivity in selectively doped GaAs/Al x Ga1−x As heterojunctions
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10.1063/1.97028
/content/aip/journal/apl/48/20/10.1063/1.97028
http://aip.metastore.ingenta.com/content/aip/journal/apl/48/20/10.1063/1.97028
/content/aip/journal/apl/48/20/10.1063/1.97028
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/content/aip/journal/apl/48/20/10.1063/1.97028
1986-05-19
2014-08-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Origin of ‘‘residual’’ persistent photoconductivity in selectively doped GaAs/AlxGa1−xAs heterojunctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/48/20/10.1063/1.97028
10.1063/1.97028
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